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Products

solar wafer

Sell solar wafer

[ Product #: 156]

Item Spec
Crystal structure Mono-crystalline
Crystal growth method CZ
Conduction Type P
Dopant B
dimension 156*156±0.4
Diameter F200±0.4
Wafer thickness range 200±10µm
Crystal orientation <100>±1
Resistivity( O.cm) 1-3/3-6
Lifetime( µs) =15
Carbon concentration( atoms/cm3 ) =5*1016
Oxygen concentration( atoms/cm3 ) =0.95*1018
Etching Pit( pcs/cm3 ) =2000
TTV =25µm
Warpage =30µm
Saw mark =15µm(depth)
Arc width departure =1.5mm
Wafer surface No crack, obvious pits, surface clean, no abnormal spots no pinholes,no"V"type chipping with naked eye allowed
Notch None
Edge defect Edge defect =0.5*1mm, with total quantity=1
Luminance edge Length=1/2 of wafer dimension, width=1/3 of wafer thickness