Item Spec Crystal structure Mono-crystalline Crystal growth method CZ Conduction Type P Dopant B dimension 156*156±0.4 Diameter F200±0.4 Wafer thickness range 200±10µm Crystal orientation <100>±1 Resistivity( O.cm) 1-3/3-6 Lifetime( µs) =15 Carbon concentration( atoms/cm3 ) =5*1016 Oxygen concentration( atoms/cm3 ) =0.95*1018 Etching Pit( pcs/cm3 ) =2000 TTV =25µm Warpage =30µm Saw mark =15µm(depth) Arc width departure =1.5mm Wafer surface No crack, obvious pits, surface clean, no abnormal spots no pinholes,no"V"type chipping with naked eye allowed Notch None Edge defect Edge defect =0.5*1mm, with total quantity=1 Luminance edge Length=1/2 of wafer dimension, width=1/3 of wafer thickness