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www.toboc.com
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silicon wafer
Item Spec
Crystal structure Mono-crystalline
Crystal growth method CZ
Conduction Type P
Dopant B
dimension 156*156±0.4
Diameter F200±0.4
Wafer thickness range 200±10µm
Crystal orientation <100>±1
Resistivity( O.cm) 1- ...
Sku: 125
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